Enhanced responsivity of β-Ga2O3 ultraviolet photodetector using Pt/ITO stacked electrode

In this paper, 10 nm Pt/90 nm ITO stacked electrode was employed to form the MSM structured β-Ga2O3 UV photodetectors, for comparison with the detectors using single 100 nm Pt electrodes. The optical response characteristics were mainly studied, and it w as found that the photocurrent and responsivity of the β-Ga2O3 detector using the Pt/ITO electrode is almost 1000 times that of the Pt electrode detector, which is due to the higher light transmittance of the Pt/ITO stacked layers. Th e results of the exper iment indicat e that the Pt/ITO stacked electrode is helpful for enhancing the performance of β-Ga2O3 UV photodetectors.