Artificial Neural Network Model of zero-bias Schottky Diode for Energy Harvesting

In this paper, the S-parameters of SMS 7630 zerobias Schottky diode are modeled with artificial neural network (ANN). A single network is trained with the data obtained from the measurements using a vector network analyzer. The frequency band of those measurements is 0.5 - 5 GHz, and input power is ranging from-25 dBm to 5 dBm. The learning and generalization capabilities of the developed ANN were tested, and results turned up to be satisfactory and useful, especially considering a limited number of different input powers for network training.