Selective deposition of metal oxide thin films on Si(100) surfaces by combination of metal-organic chemical vapour deposition and microcontact printing methods

TiO2, ZrO2 and HfO2 thin films have been deposited selectively using metal-organic chemical vapour deposition (MOCVD) technique with various single molecular precursors on Si(100) substrates which were patterned with octadecyltrichlorosilane (OTS) applied by microcontact printing (µCP). Titanium (IV) isopropoxide [Ti(O i Pr)4], bis-isopropoxy-bis-tertiarybutylacetoacetate zirconium [Zr(O i Pr)2(tbaoac)2] and hafnium tert-butoxide [Hf(O t Bu)4] were used for titanium dioxide (TiO2), hafnium and zirconium oxide (ZrO2 and HfO2) thin films, respectively. Selective depositions were successfully carried out in a home-made MOCVD system. All the deposited thin films had higher reactivity on bare silicon surfaces than OTS self-assembled monolayers (SAMs) deposited area. However, there was slightly different selective growth tendency on OTS deposited Si(100) surfaces. The selectivity tendency of the deposited thin films was revealed in order of TiO 2, HfO2 and ZrO2. This tendency was explained by means of film growth rate, structures and molecular weight of precursors and acidity of transition metal of precursors. PACS number: 81.15.GH (Some figures in this article are in colour only in the electronic version.)