Correlation of barrier material and quantum‐well number for InGaN/(In)GaN blue light‐emitting diodes

Abstract Optical properties of the InGaN/(In)GaN light‐emitting diodes (LEDs) with varied barrier materials and quantum‐well (QW) numbers are studied numerically. The simulation results show that, for the LEDs with GaN barriers, the single quantum‐well (SQW) structure has the best optical performance. However, for the LEDs with InGaN barriers, the 5‐QW structure has less serious efficiency droop and higher output power at high current than the SQW one, which makes it a better structure for high‐power LEDs. The physical mechanisms of the aforementioned phenomena can be well explained by uniformity of carrier distribution, band‐filling effect, and overlap between the electron and hole wavefunctions.