电流密度
薄膜
空间电荷
量子隧道
酞菁铜
铜
材料科学
光电子学
光刻
酞菁
电流(流体)
分析化学(期刊)
电极
化学
电气工程
纳米技术
冶金
工程类
电子
物理化学
量子力学
物理
色谱法
作者
Toshinori Matsushima,Hiroyuki Sasabe,Chihaya Adachi
摘要
We investigated current density-voltage (J-V) characteristics of copper phthalocyanine (CuPc) thin films depending on active device areas. We prepared CuPc thin-film devices with active areas smaller than S=625μm2 using a photolithography technique. The maximum breakdown current density (JMAX) and voltage (VMAX) of the devices markedly increased as the active area was decreased from S=625 to 7.9μm2. In the smallest device, with S=7.9μm2, we obtained not only an extremely high current density of JMAX=128kA∕cm2 at VMAX=9.2V, but also unique J-V characteristics, indicating that the carrier conduction process shifted from the Fowler-Nordheim tunneling injection mechanism to shallow-trap and trap-free space-charge-limited current mechanisms.
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