Properties of a hybrid photodiode based on well-aligned ZnO nanowire array and regioregular P3HT

In order to develop large-area,low-cost and high-quality photodiodes,in this pater,well-aligned ZnO nanowire arrays(ZNWAs)were grown on indium tin oxide(ITO)-coated glass substrate by a facile chemical bath deposition method.A photodiode with a structure of ITO/ZNWAs/P3HT/Ag was fabricated using ZNWAs and regioregular poly(3-hexylthiophene-2,5-diyl)(P3HT).The current-voltage(I-V)characteristics of the photodiode in dark and under illumination with a solar simulator are investigated in detail.The results demonstrate that the device shows good diode characteristics in dark and under illumination.It exhibits a rectification ratio(RR)of 3211at±2Vand ideality factor of 1.8in dark.Under 20mW/cm2 power illumination,an RR of 39.1is achieved at±2V,a large number of photogenerated carriers are produced in the device,and their transportation process is illuminated in terms of energy band diagram.