Data retention investigation in Al:HfO2-based resistive random access memory arrays by using high-temperature accelerated tests

In this work, the feasibility of using accelerated tests at high temperatures to assess the data retention on resistive random access memory devices was evaluated on Al:HfO2-based 1-transistor-1-resistor 4 kbit arrays. By annealing the samples at four different temperatures (190, 210, 230, and 260°C) for 10 h, different distributions of retention failure times were obtained and modeled by using Weibull distributions. Based on the temperature dependency of these distributions, the Arrhenius activation energy of the degradation process was calculated (1.09 eV). In addition, the maximum temperature that guarantees a retention time to failure of a 10 year lifetime was extrapolated (105°C).