材料科学
锡
王水
氮化钛
金属
合金
氮化物
镍
腐蚀
金属浇口
冶金
硅化物
钛
纳米技术
硅
栅氧化层
晶体管
电气工程
图层(电子)
电压
工程类
作者
Philippe Garnier,Marine Audouin,Christian Pizzetti,V. Loup,Laurence Gabette,Carlos Morote,David Dekraker,Brent D. Schwab
出处
期刊:Solid State Phenomena
日期:2021-02-01
卷期号:314: 289-294
标识
DOI:10.4028/www.scientific.net/ssp.314.289
摘要
During silicide formation, unreacted NiPt metals is traditionally removed either by aqua regia (ESH concern) or SPM. This latter can easily degrade the device yield in HKMG (High K Metal Gate) nodes if the metal gates (usually TiN based) aren’t perfectly encapsulated. First some new characterizations are presented to better understand the NiPt metal alloy removal, then a new solution is given to be able to remove this alloy without degrading HKMG materials.
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