铁电性
材料科学
量子隧道
凝聚态物理
隧道枢纽
半导体
单层
极化(电化学)
光电子学
纳米技术
化学
物理
电介质
物理化学
作者
Xiaoyang Shen,Y. Fang,Bobo Tian,Chun‐Gang Duan
出处
期刊:ACS applied electronic materials
[American Chemical Society]
日期:2019-06-07
卷期号:1 (7): 1133-1140
被引量:64
标识
DOI:10.1021/acsaelm.9b00146
摘要
Ferroelectric tunnel junctions, in which ferroelectric polarization and quantum tunneling are closely coupled to induce the tunneling electroresistance (TER) effect, have attracted considerable interest due to their potential in non-volatile and low-power consumption memory devices. The ferroelectric size effect, however, has hindered ferroelectric tunnel junctions from exhibiting robust TER effect. Here, our study proposes doping engineering in a two-dimensional in-plane ferroelectric semiconductor as an effective strategy to design a two-dimensional ferroelectric tunnel junction composed of homostructural $p$-type semiconductor/ferroelectric/$n$-type semiconductor. Since the in-plane polarization persists in the monolayer ferroelectric barrier, the vertical thickness of two-dimensional ferroelectric tunnel junction can be as thin as monolayer. We show that the monolayer In:SnSe/SnSe/Sb:SnSe junction provides an embodiment of this strategy. Combining density functional theory calculations with non-equilibrium Green's function formalism, we investigate the electron transport properties of In:SnSe/SnSe/Sb:SnSe and reveal a giant TER effect of 1460$\%$. The dynamical modulation of both barrier width and barrier height during the ferroelectric switching are responsible for this giant TER effect. These findings provide an important insight towards the understanding of the quantum behaviors of electrons in materials at the two-dimensional limit, and enable new possibilities for next-generation non-volatile memory devices based on flexible two-dimensional lateral ferroelectric tunnel junctions.
科研通智能强力驱动
Strongly Powered by AbleSci AI