材料科学
带隙
光电子学
光致发光
电子迁移率
半导体
脉冲激光沉积
薄膜
电阻式触摸屏
蓝移
激光器
基质(水族馆)
宽禁带半导体
光学
纳米技术
工程类
地质学
物理
电气工程
海洋学
作者
Dingheng Zheng,Junichi Shiogai,Kohei Fujiwara,Atsushi Tsukazaki
摘要
Layer-structured InSe is one of the intensively studied two-dimensional monochalcogenide semiconductors for optical and electrical devices. Significant features of the InSe device are the thickness dependent bandgap modification resulting in a peak shift of photoluminescence and a drastic variation of electron mobility. In this study, by applying the pulsed-laser deposition technique, we investigated the optical and electrical properties of c-axis oriented InSe films with the thickness varying from a few to hundred nanometers. The energy at the absorption edge systematically shifts from about 3.3 to 1.4 eV with the increasing thickness. The InSe films on Al2O3(0001) are highly resistive, while those on InP(111) are conductive, which probably originates from the valence mismatch effect at the interface. The electron mobility of the conducting charge carrier at the interface of InSe/InP is enhanced in thicker samples than the critical thickness of about 10 nm, corresponding to the bandgap modification characterized by the optical measurement. Therefore, the substrate and the film thickness are critically important factors for the materialization of InSe optical and electrical device applications.
科研通智能强力驱动
Strongly Powered by AbleSci AI