A study of trap and recombination centers in MAPbI3 perovskites

Trapping and recombination processes in thin films of CH₃NH₃PbI₃ (MAPbI₃) were studied by means of transient photoconductivity measurements and theoretical simulations of the relaxation curves resulting from the photocurrent measurements; in particular, the influence of temperature, as well as of the sample intensity of temperature illumination and pressure inside the measurement system on the photoconductivity response were studied.