Atomic layer deposition of PbTiO3 and its component oxide films

Atomic layer deposition of ferroelectric PbTiO3(PTO) thin films and its component oxide films were attempted using the Pb(DMAMP)2and Ti(Oi-Pr)4or Ti(Ot-Bu)4, as the Pb-and Ti-precursors, respectively, and H2O as oxidant at a wafer temperature of 200 on Ir/IrO2/SiO2/Si substrate. The stoichiometric PTO thin films were grown by a proper control of the cycle ratio of the PbO and TiO2cycles. The increase of the PTO film growth rate due to the cayalytic effect was observed compared to its component oxide films for both processes using Ti(Oi-Pr)4or Ti(Ot-Bu)4. The as-deposited PTO film was amorphous so that two different post-deposition annealing method, i.e. slow and fast furnace annealing at 600 , were used to crystallize PTO film. The higher growth rate of PTO film grown using Ti(Oi-Pr)4due to the higher growth rate of TiO2film compared to the case using Ti(Ot-Bu)4resulted in less dense PTO film with the higher density of micro-pores inside as well as surface of film after the fast furnace annealing. Slow furnace annealing improved the surface morphology of PTO film and reduced the micro-pore density. Post-deposition annealing transformed amorphous film to polycrystalline film of perovskite sturcure with an a-axis preferred crystallographic orientation.