Fabrication and characterization of a novel multi-annular type backscattered electron detector for SEM

A novel silicon p-i-n diodes for detecting backscattering electrons in SEM was proposed and fabricated. The multi-annular configuration enables to provide better surface topography contrast of BSE image compared with traditional quadratic configuration. In this study, the multi-annular backscattered electron detector (BSED) can provide surface topography contrast of 82.11 nA/μm, which is 105% increase as compared with commercial BSED. Besides, the multi-annular detector has lower threshold detective energy of 1.28 keV and wide detective dynamic range (up to 30 keV). It is demonstrated that the multi-annular BSE detector is well suited for imaging in SEM system.