Numerical Simulation and Analytical Modelling of C8-BTBT-C8 Organic Transistor and Analysis of Semiconductor Thickness

Thin film devices have pervasive presence role in applause emerging and conventional technologies. This paper presents TCAD modelling of 2,7-dioctyl{1}benzothieno{3,2-b}{1}benzothiophene (C8-BTBT-C8) OTFT. The model is based on defect description and charge recombination. The model consists of band gap modelling and deep and tail density of state (DOS). The model is examined with experimental data, and the performance parameter is also compared. Using this verified model, the systematic study of the active layer thickness is also performed in this work.