带隙基准
工艺变化
电阻器
温度系数
带隙
修边
CMOS芯片
工艺角
分段
材料科学
电子工程
曲率
光电子学
电压基准
电压
电气工程
计算机科学
数学
工程类
数学分析
操作系统
几何学
跌落电压
作者
Yong-Joon Ahn,Suhwan Kim,Hyunjoong Lee
标识
DOI:10.1109/socc49529.2020.9524787
摘要
This paper presents a CMOS high-precision bandgap voltage reference. To obtain low temperature coefficient (TC) regardless of process variation, piecewise second-order curvature compensation method is proposed. Curvature compensation current is generated through current subtraction and current squaring operation with two currents with different dependence on temperature. Also, several circuit techniques are adopted to achieve compensate error sources. Chopping technique is utilized to cancel 1/f noise and DC offset of the error amplifier. Trimming resistor is used to compensate process variation. The bandgap reference is designed in a 0.13µm CMOS process. Post layout simulation shows that TC of the bandgap reference is 0.64ppm/°C over a wide temperature range of -40°C to 125°C. Moreover, sub-1 ppm/°C TC is achieved irrespective of process variation after two-point temperature trimming. The bandgap reference consumes 44µA at 27°C and layout size is 0.0534mm 2 .
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