非阻塞I/O
X射线光电子能谱
材料科学
氧化镍
带隙
钙钛矿(结构)
电导率
分析化学(期刊)
镍
光电发射光谱学
半导体
氧化物
结合能
化学工程
光电子学
原子物理学
结晶学
物理化学
化学
冶金
催化作用
工程类
物理
生物化学
色谱法
作者
Pronoy Nandi,Hyoungmin Park,Sooun Shin,Jin‐Wook Lee,Jin Young Kim,Min Jae Ko,Hyun Suk Jung,Nam‐Gyu Park,Hyunjung Shin
标识
DOI:10.1002/admi.202300751
摘要
Abstract Hygroscopic and acidic nature of organic hole transport layers (HTLs) insisted to replace it with metal oxide semiconductors due to their favorable charge carrier transport with long chemical stability. Apart from large direct bandgap and high optical transmittance, ionization energy in the range of −5.0 to −5.4 eV leads to use NiO as HTL due to good energetic matching with lead halide perovskites. Analyzing X‐ray photoelectron spectroscopic (XPS) data of NiO, it is speculated that p‐type conductivity is related to the NiOOH or Ni 2 O 3 states in the structure and the electrical conductivity can be modified by altering the concentration of nickel or oxygen vacancies. However, it is difficult to separate the contribution from nonlocal screening, surface effect and the presence of vacancy induced Ni 3+ ion due to very strong satellite structure in the Ni 2 p XPS spectrum of NiO. Thus, an effective approach to analyze the NiO XPS spectrum is presented and the way to correlate the presence of Ni 3+ with the conductivity results which will help to avoid overestimation in finding the oxygen‐rich/deficient conditions in NiO.
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