材料科学
响应度
光电探测器
光电流
光电子学
紫外线
暗电流
半导体
辐射
光学
物理
作者
Zhihong Zhang,Shanshan Yan,Yulong Chen,Zhen‐Dong Lian,Ai Fu,Youchao Kong,Lin Li,Shichen Su,Kar-Wei Ng,Zhipeng Wei,Hong‐Chao Liu,Shuangpeng Wang
标识
DOI:10.1021/acsami.3c17881
摘要
The rapid evolution of the Internet of Things has engendered increased requirements for low-cost, self-powered UV photodetectors. Herein, high-performance self-driven UV photodetectors are fabricated by designing asymmetric metal–semiconductor–metal structures on the high-quality large-area CsCu2I3 microwire arrays. The asymmetrical depletion region doubles the photocurrent and response speed compared to the symmetric structure device, leading to a high responsivity of 233 mA/W to 355 nm radiation. Notably, at 0 V bias, the asymmetric device produces an open-circuit voltage of 356 mV and drives to a short-circuit current of 372 pA; meanwhile, the switch ratio (Iph/Idark) reaches up to 103, indicating its excellent potential for detecting weak light. Furthermore, the device maintains stable responses throughout 10000 UV-light switch cycles, with negligible degradation even after 90-day storage in air. Our work establishes that CsCu2I3 is a good candidate for self-powered UV detection and thoroughly demonstrates its potential as a passive device.
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