维数之咒
异质结
钙钛矿(结构)
材料科学
纳米技术
光电子学
工程物理
化学
计算机科学
结晶学
物理
人工智能
作者
Chaohui Li,Kaicheng Zhang,Swatilekha Maiti,Zijian Peng,Jingjing Tian,Hyoungwon Park,Jun Soo Byun,Zhiqiang Xie,Lirong Dong,Shudi Qiu,Andreas Bornschlegl,Chao Liu,Jiyun Zhang,Andres Osvet,Thomas Heumueller,Silke Christiansen,Marcus Halik,Tobias Unruh,Ning Li,Larry Lüer,Christoph J. Brabec
出处
期刊:ACS energy letters
[American Chemical Society]
日期:2024-02-01
卷期号:: 779-788
标识
DOI:10.1021/acsenergylett.4c00045
摘要
Interface engineering is crucial to achieving stable perovskite photovoltaic devices. A versatile approach is developed to tailor interface properties via integrating co-assembled monolayers (co-SAMs) at the p-type buried interface and by capping a two-dimensional (2D) perovskite layer at the n-type upper interface with vacuum quenching. Optimized co-SAMs promote the coverage of the hole transport layer, significantly reducing the incidence of leakage currents. Based on this foundation, we develop damp-heat-stable perovskite solar cells by precisely tailoring the fragments of 2D perovskite layers through vacuum annealing with phenethylammonium iodide. An impressive open-circuit voltage of 1.216 V is achieved, corresponding to 92% of the value determined by the detailed-balance limit, along with a power conversion efficiency of 23.68%. Ultimately, integrating co-SAMs and the vacuum-assisted annealing fabricated devices maintain 96% and 80% of initial efficiencies after 1200 and 500 h of tracking at a maximum power point under 55 and 85 °C, respectively.
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