铁电性
材料科学
凝聚态物理
磁滞
极化(电化学)
量子隧道
压电响应力显微镜
原子单位
纳米
纳米技术
化学物理
光电子学
物理
复合材料
量子力学
化学
物理化学
电介质
作者
Ming Liu,Xinzuo Sun,Yan Chen,Takashi Taniguchi,Kenji Watanabe,Menghao Wu,Wei Bai,Jiamin Xue
标识
DOI:10.1002/adma.202203990
摘要
Robust room-temperature interfacial ferroelectricity has been formed in the 2D limit by simply twisting two atomic layers of non-ferroelectric hexagonal boron nitride (hBN). A thorough understanding of this newly discovered ferroelectric system is required. Here, twisted hBN is used as a tunneling junction and it is studied at the nanometer scale using conductive atomic force microscopy. Three properties unique to this system are discovered. First, the polarization dependence of the tunneling resistance contrasts with the conventional theory. Second, the ferroelectric domains can be controlled using mechanical stress, highlighting the original meaning of the emergent "slidetronics". Third, ferroelectric hysteresis is highly spatially dependent. The hysteresis is symmetric at the domain walls. A few nanometers away, the hysteresis shifts completely to the positive or negative side, depending on the original polarization. These findings reveal the unconventional ferroelectricity in this 2D system.
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