材料科学
带隙
光电子学
二次谐波产生
实现(概率)
Crystal(编程语言)
双折射
格子(音乐)
光子晶体
光学
非线性光学
非线性系统
晶体结构
非线性光学
高次谐波产生
传输(电信)
导带
宽禁带半导体
电子能带结构
激光器
四面体
工作(物理)
作者
Haochen Li,Haotian Tian,Pifu Gong,Tianyu Wang,Hongyu Liu,Bing Li,Qian Wu,Mingjun Xia
出处
期刊:Angewandte Chemie
[Wiley]
日期:2025-10-17
卷期号:64 (50): e202518549-e202518549
被引量:5
标识
DOI:10.1002/anie.202518549
摘要
Mid-infrared (MIR) nonlinear optical (NLO) crystals have long been pursued, yet the realization of a balance among key performance metrics remains a formidable challenge. Herein, we propose a band-orientation co-anchoring strategy to precisely regulate the band structures and module spatial arrangement for the rational design of high-performance MIR NLO crystals. Leveraging the deep-ultraviolet NLO KBe2BO3F2 (KBBF) as a template, a novel MIR NLO Rb3ZnV4O12Br (RZVB) crystal was successfully obtained through multimodule substitution. Importantly, the tailored tetrahedral hybridization mode effectively anchors the conduction band minimum-dominated by d0 cations-at a higher energy level and suppresses d-d transitions. Concurrently, structural confinement within the KBBF-derived lattice enforces the optimal alignment of distorted tetrahedra. Furthermore, RZVB displays an unprecedented second harmonic generation (SHG) enhancement mechanism, arising from a unique cross-module electron transfer. Consequently, RZVB exhibits superior linear and NLO performances, including a wide bandgap (3.25 eV), high laser threshold damage (1.07 GW/cm2@1064 nm), broad transmission window (0.382-7.6 µm), moderate birefringence (0.06@589.3 nm) and the strongest SHG response (7.7 × KDP@1064 nm and 1.45 × AGS@2.09 µm) among vanadates with bandgap exceeding 3 eV. This work presents a high-performance MIR NLO crystal and establishes a bottom-up, broadly applicable design paradigm for the tailored development of next-generation crystalline materials.
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