Charge Carrier Recombination Dynamics in MAPb(BrxCl1–x)3 Single Crystals

Understanding carrier recombination processes in MAPb(Br_xCl_1-x)₃ crystals is essential for their photoelectrical applications. In this work, carrier recombination dynamics in MAPb(Br_xCl_1-x)₃ single crystals were studied by steady-state photoluminescence (PL), time-resolved photoluminescence (TRPL), and time-resolved microwave photoconductivity (TRMC). By comparing TRPL and TRMC, we find TRPL of MAPb(Br_xCl_1-x)₃ (x < 0.98) single crystals is dominated by a hole trapping process while the long-lived component of TRMC is dominated by an electron trapping process. We also find both electron and hole trapping rates of MAPb(Br_xCl_1-x)₃ (x < 0.98) crystals decrease with an increase in Br content. A temperature-dependent PL study shows there are shallow trap states besides the deep level trap states in the MAPb(Br_0.82Cl_0.18)₃ crystal. The activation energy for holes in shallow trap states detrapped into the valence band is ∼0.1 eV, while the activation energy for free holes to be trapped into deep trap states is ∼0.4 eV. This work provides insight into carrier recombination processes in MAPb(Br_xCl_1-x)₃ single crystals.