光电流
铁电性
材料科学
光电子学
极化(电化学)
介电谱
外延
薄膜
图层(电子)
电极
纳米技术
电化学
电介质
化学
物理化学
作者
Hwanchol Jang,Yejoon Kim,Ho Jin Choi,Jiwoong Yang,Yoonsung Jung,Sungkyun Choi,Donghyeon Lee,Ho Won Jang,Sanghan Lee
标识
DOI:10.1016/j.jechem.2023.10.041
摘要
BiVO4 (BVO) is a promising material as the photoanode for use in photoelectrochemical applications. However, the high charge recombination and slow charge transfer of the BVO have been obstacles to achieving satisfactory photoelectrochemical performance. To address this, various modifications have been attempted, including the use of ferroelectric materials. Ferroelectric materials can form a permanent polarization within the layer, enhancing the separation and transport of photo-excited electron-hole pairs. In this study, we propose a novel approach by depositing an epitaxial BiFeO3 (BFO) thin film underneath the BVO thin film (BVO/BFO) to harness the ferroelectric property of BFO. The self-polarization of the inserted BFO thin film simultaneously functions as a buffer layer to enhance charge transport and a hole-blocking layer to reduce charge recombination. As a result, the BVO/BFO photoanodes showed more than 3.5 times higher photocurrent density (0.65 mA cm−2) at 1.23 VRHE under the illumination compared to the bare BVO photoanodes (0.18 mA cm−2), which is consistent with the increase of the applied bias photon-to-current conversion efficiencies (ABPE) and the result of electrochemical impedance spectroscopy (EIS) analysis. These results can be attributed to the self-polarization exhibited by the inserted BFO thin film, which promoted the charge separation and transfer efficiency of the BVO photoanodes.
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