Two-dimensional growth of Cu-based materials with a nonvolatile resistive switching behavior

Two-dimensional (2D) crystals have attracted much attention to the application in next-generation non-volatile memories due to their interesting structures and features. Herein, we report the controllable synthesis of 2D Cu2SxSe1– x crystals via a facile ambient pressure vapor deposition method. And the planar and vertical devices on the synthesized Cu2SxSe1– x crystals demonstrate a stable nonvolatile resistance switching. Most importantly, the planar Cu2SxSe1–x devices show a bipolar resistance switching behavior with a memory window of ∼103 and a relatively low operating voltage (<1 V). While the vertical Cu2SxSe1–x device exhibits a unipolar switching behavior with a large memory window of ∼105. Our findings in this work broaden the horizon for the in-situ synthesis of 2D materials and enlighten the possibility of related applications in neural synapse and artificial intelligence.