记忆电阻器
油藏计算
计算机安全
入侵检测系统
入侵
计算机科学
工程类
地质学
电气工程
人工智能
人工神经网络
地球化学
循环神经网络
作者
Guobin Zhang,Z. G. Wang,Xuemeng Fan,Pengtao Li,Dawei Gao,Zhenyong Zhang,Qing Wan,Yishu Zhang
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-11-15
标识
DOI:10.1021/acs.nanolett.4c04385
摘要
The increasing sophistication of cybersecurity threats, driven by the proliferation of big data and the Internet of Things (IoT), necessitates the development of advanced real-time intrusion detection systems (IDSs). In this study, we present a novel approach that integrates NiO-doped WO3–x/ZnO bilayer self-rectifying memristors (SRMs) within a reservoir computing (RC) framework for IDS applications. The proposed crossbar array architecture exploits the exceptional dynamic properties of SRMs, achieving a classification accuracy of 93.07% on the CSE-CIC-IDS2018 data set, while demonstrating ultrahigh information-processing efficiency. Our approach not only leverages the tunable characteristics of memristors but also addresses the challenge of sneak path currents in large-scale integration, offering a robust and scalable solution for next-generation IDS. This work exemplifies the power of emerging electronics in enhancing cybersecurity through innovative hardware implementations.
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