Formation of Siliconp+πpnνn+Structure by Epitaxial Growth

Silicon p+pnνn+ and p+ πpnνn+ structures were formed by all epitaxial process. The voltage dependence of the junction capacitance and the spreading resistance were measured, and with which the profiles of impurity density and electric field were calculated. Equivalent sharpness and balance of p and n layers were obtained, compared with those formed by ion implantation by Seidel et al. IMPATT diodes for X-band were fabricated using these wafers. Oscillation efficiencies of 6.2% and 8.3% were obtained with p+pnνn+ and p+ πpnνn+ diodes, respectively, which are comparable with those reported about the implanted diodes.