光电子学
电致发光
量子点
材料科学
CMOS芯片
二极管
磷化铟
发光二极管
量子效率
亮度
质量(理念)
铟
量子
电气工程
有机发光二极管
作者
Yu-Sian Lin,Chang-Hsin Lu,Tse-Huang Lo,Chih-Wen Lu,Hsueh-Shih Chen
摘要
The study focuses on developing quantum dot light‐emitting diodes (QLEDs) with improved performance through optimized film quality and core/shell structures. A QLED with an external quantum efficiency (EQE) improved by approximately 44.8% and a high‐brightness indium phosphide (InP) device with brightness of approximately 7,000 cd/m 2 were realized. A 0.08‐inch CMOS integrated QLED microdisplay was demonstrated, which can be used for AR/VR microdisplays.
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