捷克先令
石墨烯
材料科学
图层(电子)
接口(物质)
钼
光电子学
纳米技术
复合材料
接触角
冶金
坐滴法
作者
Manoj Vishwakarma,Narayana Thota,Olesia M. Karakulina,Joke Hadermann,B. R. Mehta
出处
期刊:Nucleation and Atmospheric Aerosols
日期:2018-01-01
卷期号:1953: 100064-100064
被引量:15
摘要
The growth of MoS2 layer near the Mo/CZTS interface during sulphurization process can have an impact on back contact cell parameters (series resistance and fill factor) depending upon the thickness or quality of MoS2. This study reports the dependence of the thickness of interfacial MoS2 layer on the growth of graphene at the interface between molybdenum back contact and deposited CZTS layer. The graphene layer reduces the accumulation of Zn/ZnS, Sn/SnO2 and formation of pores near the MoS2-CZTS interface. The use of graphene as interface layer can be potentially useful for improving the quality of Mo/MoS2/CZTS interface.
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