Gate-All-Around Technology for Sustainable AI: A Foundation for Future Logic Architectures

The transition from FinFET to Gate-All-Around (GAA) FET architectures is a necessary step driven by the physical limitations of FinFETs at advanced technology nodes, and GAA FETs offer superior electrostatic control, enabling steeper sub-threshold slopes and reduced leakage currents. GAA FETs provide additional design freedoms, such as continuous nanosheet width patterning, allowing for broader coverage across the speed-power spectrum and enabling the implementation of design technology co-optimization techniques to maximize chip design utility. The GAA architecture serves as a foundational platform for future innovations, including Forksheet, 3D-stacked FET, and their integration with backside power delivery networks, paving the way for energy-efficient computation and sustainable AI development.