材料科学
薄脆饼
热弹性阻尼
位错
复合材料
GSM演进的增强数据速率
增长率
Crystal(编程语言)
结晶学
光电子学
热力学
几何学
物理
电信
计算机科学
化学
数学
程序设计语言
热的
作者
Ian Manning,Yusuke Matsuda,Gil Yong Chung,Edward Sanchez,Michael Dudley,Tuerxun Ailihumaer,Balaji Raghothamachar
出处
期刊:Materials Science Forum
日期:2020-07-01
卷期号:1004: 37-43
被引量:6
标识
DOI:10.4028/www.scientific.net/msf.1004.37
摘要
The thermoelastic stress, mechanical properties and defect content of bulk 4H n-type SiC crystals were investigated following adjustments to the PVT growth cell configuration that led to a 40% increase in growth rate. The resulting 150 mm wafers were compared with wafers produced from a control process in terms of wafer bow and warp, and dislocation density. Wafer shape was found to be comparable among the processes, indicating minimal impact on internal stress. Threading edge and threading screw dislocation densities increased and decreased, respectively, while basal plane dislocation densities were unaffected by the increase in growth rate. Loss of wafer planar stability was observed in certain cases. The elastic modulus was measured to be in the range of approximately 420-450 GPa for selected stable and unstable wafers, and was found to correspond to resistivity.
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