S-scheme electron transfer promoted by novel indium oxide quantum dot–loaded carbon nitride heterojunctions promoted using oxidized indium monomers

The graphitic carbon nitride (g-C3N4) photocatalysis has emerged as a clean method for cleaving lignin-linked bonds due to its mild and sunlight-driven reaction conditions. The fast electron–hole pair complex of g-C3N4 constrains its degradation efficiency, making the heterojunction construction a popular solution. The conventional methods of preparing g-C3N4 heterojunctions by physical mixing destroy π-conjugations in g-C3N4, reducing the adsorption of lignin containing benzene rings. In this study, a novel indium oxide (In2O3) quantum dot–g-C3N4 0D/2D heterojunction was prepared through the high-temperature oxidation of pre-prepared indium-doped g-C3N4. The introduction of In2O3 at the quantum dot level minimizes the interference with lignin adsorption capacity. The strong combination of the two (In2O3 and g-C3N4) increases the intersection interface area, promoting the S-scheme transfer route of the photogenerated electrons. Consequently, this enhances the photoelectric conversion efficiency and carrier lifetime of the heterojunction, and inhibits the rapid recombination of photogenerated electron–hole pairs in g-C3N4. The proposed heterojunction was 3 times more efficient than g-C3N4 alone for selective cleavage of lignin β–O–4 bonds after 2h of sunlight irradiation. Combined with inhibitor experiments and gas chromatography–mass spectrometry analysis, this paper defines the reactive oxides and proposes a cleavage pathway for the lignin β–O–4 bonds in In2O3–g-C3N4 heterojunction system.