Surface roughness analysis of Cu seed layer deposited on α-Ti diffusion barrier layer: A molecular dynamics simulation study

Copper (Cu) interconnections have been widely used in advanced electronic packaging due to their outstanding thermal and electric properties. Preparing a smooth and uniform Cu seed thin layer is one of the critical processes to obtain high-reliability Cu interconnections. The barrier layer between Cu and silicon (Si) devices is necessary to prevent the inter-diffusion between Cu and Si. However, little work has been done on the surface roughness analysis of the Cu seed layer deposited on the diffusion barrier layer. In this paper, the influences of deposition thickness, incident energy, barrier layer temperature, and surface morphology on the surface roughness of the Cu seed layer deposited on α-titanium (α-Ti) barrier layer were studied in detail by the molecular dynamics (MD). The simulation results indicated that appropriate parameters have a beneficial effect on reducing the surface roughness, and the surface morphology of the Cu seed layer strongly connects with that of the barrier layer. These results provided a foundation for optimizing the quality of the Cu seed layer.