超导电性
半金属
凝聚态物理
Weyl半金属
邻近效应(电子束光刻)
异质结
电导
电子结构
相(物质)
物理
材料科学
带隙
纳米技术
图层(电子)
量子力学
抵抗
电子束光刻
作者
Dingding Li,Ping Zhang,Hongmei Du,Zihan Wei,W.B. Tian,Shixian Chen,Zuyu Xu,Jun Li,Yang-Yang Lyu,Hancong Sun,Guozhu Sun,Jian Chen,Biaobing Jin,Huabing Wang,Peiheng Wu
摘要
Heterostructures between conventional superconductors and materials with different electronic ground states have emerged as a powerful method for exploring the exotic superconducting properties induced by the proximity effect. Here, we investigate Andreev transport through the interface between an s-wave superconductor Nb and a type-II Wely semimetal NbIrTe4. The differential conductance measurement reveals an anomalous zero-bias conductance peak and prominent subgap structures at low temperatures. Furthermore, we found that these subgap structures are not only related to the interface coupling strength but also influenced by the thickness of the NbIrTe4 flake. For thin devices (≤100 nm), the differential conductance spectra only exhibit a single-gap structure. While in thicker devices (∼150 nm), we observed the distinct double-gap structure, which is likely to originate from the proximity-induced superconductivity gap on the bulk and surface of the NbIrTe4 flakes. These results can provide a good reference for understanding the superconducting phase in type-II Weyl semimetals and take a step toward its future application in the field of superconducting electronics.
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