光致发光
材料科学
结构精修
空位缺陷
钙钛矿(结构)
兴奋剂
晶体结构
卤化物
带隙
结晶学
发光
钆
光电子学
化学
无机化学
冶金
作者
Aadil Ahmad Bhat,Nitesh Singh,Rajesh V. Nair,Erik Dujardin,Jadab Sharma
标识
DOI:10.1016/j.optmat.2023.113937
摘要
The recent advancement in bandgap engineering through controlled doping has widen the prospect of vacancy ordered double halide perovskites (VO DHPs) by conferring them with designable optoelectronic properties. Here, we report confocal mapping of Gd doped Cs2SnCl6 along with the macroscopic photoluminescence studies. The insertion of Gd3+ ions into the crystal structure facilitates an additional stable room temperature low intensity PL emission at ca. 615 nm (∼2.0 eV) in addition to the major emission at ca. 445 nm (∼2.7 eV) due to the creation of defect states. Both the pristine (Cs2SnCl6) and Gd:Cs2SnCl6 exhibit crystalline cubic structure with the space group of Fm3‾m. The Rietveld refinement correlates well with the experimental X-ray diffraction data, while the SEM studies confirm the anisotropic growth, forming large micron sized octahedral structures of pristine (>20 μm) and partly distorted crystals of Gd:Cs2SnCl6 (<5 μm). This study enhances the understanding of hitherto unknown 2nd emission at room temperature of larger crystals of Gd:Cs2SnCl6 having implications in quantum photonics.
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