Controlling titanium incorporation in hydrogenated amorphous carbon films via closed-loop feedback in reactive high power impulse magnetron sputtering

材料科学 高功率脉冲磁控溅射 脉冲(物理) 无定形固体 溅射沉积 溅射 腔磁控管 无定形碳 循环(图论) 复合材料 冶金 光电子学 薄膜 纳米技术 结晶学 化学 物理 数学 量子力学 组合数学
作者
Pornthip RATCHAYOTEE,Artit Chingsungnoen,Phitsanu Poolcharuansin
出处
期刊:Journal of metals, materials and minerals 卷期号:34 (4): 2114-2114
标识
DOI:10.55713/jmmm.v34i4.2114
摘要

A closed-loop feedback approach has been developed to control titanium incorporation in hydrogenated amorphous carbon (a-C:H) films during reactive high-power impulse magnetron sputtering (R-HiPIMS). The average discharge current measured at the magnetron target is used as the primary feedback signal to regulate the target coverage state. Hence, the titanium concentration in the films can be controlled. Significant changes were observed in the film microstructure and properties as the target state evolved with increasing target coverage. This causes the film transition from metallic titanium to a-C:H films with decreasing titanium concentration. For example, the XRD and Raman analyses indicated a microstructural change from hexagonal titanium to cubic titanium carbide and finally to amorphous carbon. The change in microstructure aligned with the density decreasing from 4.7 g∙cm‒3 to 1.6 g∙cm‒3 measured by XRR technique. In addition, a decrease in the Ti/C atomic ratio, from 1.53 to 0.03, clearly demonstrates that the titanium content can precisely be controlled. A simplified model was proposed to explain the relationship between the average HiPIMS current and the carbon coverage fraction on the target surface. The suggested relationship clarifies how adjusting the average discharge current effectively regulates the target coverage state and the consequent titanium concentration. The approach not only enhances process stability, but also offers an alternative to traditional control techniques during the deposition process.

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