Interfacial electronic and vacancy defect engineering coupling of the Z-scheme CsSnBr3/SnS2 heterostructure for photovoltaic performance: a hybrid DFT study

Interfacial coupling of Z-scheme CsSnBr 3 /SnS 2 heterostructure induces a narrowing band gap and reduces carrier recombination rate. Coupling interface and Br vacancy defects of CsSnBr 3 has excellent photovoltaic performance.