材料科学
异质结
双极扩散
石墨烯
杰纳斯
量子隧道
阈下摆动
阈下斜率
光电子学
肖特基势垒
晶体管
电压
纳米技术
阈值电压
电气工程
二极管
电子
物理
工程类
量子力学
作者
Xinjiang Zhang,Anping Huang,Zhisong Xiao,Mei Wang,Jing Zhang,Paul K. Chu
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2022-10-19
卷期号:34 (1): 015203-015203
被引量:1
标识
DOI:10.1088/1361-6528/ac96f5
摘要
The transfer characteristics and switching mechanism of the steep-slope transistor composed of the graphene/Janus MoSSe heterostructure are investigated by quantum transport calculation. The Schottky barrier height at the Gr/SMoSe interface and tunneling width between the channel and drain can be tuned by the gate voltage, so that the device exhibits ambipolar switching with two minima in the subthreshold swing slope. 34 and 29 mV decade-1subthreshold swings can be achieved and the on/off ratios are over 106and 108for the different switching mechanisms. The device provides a solution and guidance for the future design of low-power, high-performance devices.
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