2.87 kV/3.68 mΩ cm2 low forward voltage Ga2O3 vertical SBD with nitrogen-doped protecting ring and mesa termination

In this paper, a vertical Ga2O3 Schottky barrier diode (SBD) with nitrogen (N)-doped protecting ring and mesa termination (NMT-SBD) is fabricated. In addition to the electric field optimization effect of the mesa termination, the NMT-SBD also features the N-doped protecting ring to reduce the electric field near the anode edge. This further increases the breakdown voltage (BV) and enables the Ni/Ga2O3 contact with a low barrier height to be used as the anode, leading to a low forward voltage (VF). The experimental results show that the device achieves a BV of 2.87 kV and a specific on resistance of 3.68 mΩ cm2, resulting in a high power figure of merit of 2.24 GW/cm2. Furthermore, the device exhibits a low VF (@100 A/cm2) of 1.3 V, confirming its excellent performance with low conduction loss. This work demonstrates a promising strategy for fabricating high-power Ga2O3 vertical Schottky barrier diode.