硫系化合物
自旋电子学
杰纳斯
凝聚态物理
铁磁性
半导体
过渡金属
磁性半导体
材料科学
相变
磁各向异性
各向异性
纳米技术
化学
光电子学
磁场
物理
磁化
光学
催化作用
量子力学
生物化学
作者
Siyu Han,Jiaqi Wang,Tong Zhao,Jian Zhou,Naihua Miao,Zhimei Sun
摘要
Two-dimensional (2D) magnetic semiconductors have received increasing interest for spintronic applications due to their tunable magnetic properties. Using first-principles calculations, we design a series of 2D novel ferromagnetic semiconductors, including VSBr and Janus M2S2BrX (M = Cr/V, X = F, Cl, I), which exhibit various exotic properties. We realize an indirect-to-direct bandgap transition in Cr2S2BrF, a giant perpendicular magnetic anisotropy in V2S2BrI, and a significant TC enhancement in both V2S2BrF and V2S2BrI. Notably, we reveal that biaxial tensile strain can induce a phase transition from ferromagnetic to antiferromagnetic states in the VSBr, V2S2BrCl and V2S2BrI, which is driven by the sign reversal of the third nearest-neighbor spin interaction J3. Meanwhile, under tensile strain, the TC of VSBr and V2S2BrCl reach 264 K and 297 K, respectively. These findings highlight our designed materials for great potential applications in advanced electronic and spintronic devices, showcasing their unique capabilities and promising performance.
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