功率(物理)
微流控
电气工程
电源模块
功率密度
电子工程
计算机科学
材料科学
工程类
物理
纳米技术
量子力学
作者
Weiyu Tang,Xiangbo Huang,Zhixin Chen,Kuang Sheng,Zan Wu
标识
DOI:10.1109/tpel.2025.3584306
摘要
The increasing power density of SiC power modules presents significant challenges in achieving uniform high-heat-flux thermal management, which is often limited by conventional packages. To address this, an embedded microfluidic-cooled SiC power module is developed, combining embedded microchannels and nano-silver sintering to enable efficient and uniform cooling. Microchannels were directly fabricated beneath the die footprint in the direct-bonded copper (DBC) substrate using picosecond laser etching, with a crossover double-layer manifold integrated into the baseplate to facilitate large-area liquid distribution. The thermal performance and temperature uniformity of the proposed design were first validated using SiC thermal test chips (SiC TTCs). Our results demonstrated an ultra-low junction-to-fluid thermal resistance of 0.064 K/W and a coefficient of performance (COP) greater than 20,000, representing a 52% reduction and more than a 10-fold improvement over conventional heat sinks, respectively. The design allowed reliable heat dissipation up to 655 W at a coolant flow rate of 3 g/s, reducing junction temperature gradients by 86%. Finally, when applied to a practical SiC power module, the improved thermal performance of the new architecture led to an increase in current capacity by 43%. The proposed co-designed integrated microfluidic-cooled packaging architecture offers an efficient and easy-to-extend solution for next-generation high-power-density power electronics.
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