Rollable Silicon IC Wafers Achieved by Backside Nanotexturing

This letter presents a wafer-level approach for producing rollable single-crystal silicon integrated circuit (IC) wafers, bent with a 17-mm minimum radius of curvature, achieved by backside nanotexturing. The three-point bending test indicates a mechanical strength enhancement by a factor of 2.3 for nanotextured 60-μm thick samples. The minimum radius of curvature decreased by 43.4%, exhibiting improved flexibility. The carrier charge mobility increases by 4.9%, 12.6%, and 16.9% for the bending radii of 45, 30, and 24 mm, respectively. The increment of the mobility corresponds with the changing compressive stress in p-MOSFETs fabricated on the IC wafer.