倍半硅氧烷氢
材料科学
光刻
光电子学
光刻胶
抵抗
飞秒
光掩模
纳米技术
平版印刷术
纳米尺度
电子束光刻
激光器
极紫外光刻
下一代光刻
模版印刷
纳米光刻
制作
光学
医学
物理
替代医学
图层(电子)
病理
作者
Feng Jin,Jie Liu,Yuanyuan Zhao,Xian‐Zi Dong,Mei‐Ling Zheng,Xuan‐Ming Duan
标识
DOI:10.1038/s41467-022-29036-7
摘要
It's critically important to construct arbitrary inorganic features with high resolution. As an inorganic photoresist, hydrogen silsesquioxane (HSQ) has been patterned by irradiation sources with short wavelength, such as EUV and electron beam. However, the fabrication of three- dimensional nanoscale HSQ features utilizing infrared light sources is still challenging. Here, we demonstrate femtosecond laser direct writing (FsLDW) of HSQ through multi-photon absorption process. 26 nm feature size is achieved by using 780 nm fs laser, indicating super-diffraction limit photolithography of λ/30 for HSQ. HSQ microstructures by FsLDW possess nanoscale resolution, smooth surface, and thermal stability up to 600 °C. Furthermore, we perform FsLDW of HSQ to construct structural colour and Fresnel lens with desirable optical properties, thermal and chemical resistance. This study demonstrates that inorganic features can be flexibly achieved by FsLDW of HSQ, which would be prospective for fabricating micro-nano devices requiring nanoscale resolution, thermal and chemical resistance.
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