X射线光电子能谱
钨酸盐
薄膜
材料科学
扫描电子显微镜
吸附
分析化学(期刊)
单斜晶系
傅里叶变换红外光谱
钨酸钠
化学工程
纳米技术
化学
晶体结构
复合材料
结晶学
钨
物理化学
有机化学
工程类
冶金
作者
P.P. Bagwade,D.B. Malavekar,S.B. Ubale,Ravindra N. Bulakhe,I. In,Umakant M. Patil,C.D. Lokhande
标识
DOI:10.1016/j.electacta.2022.139933
摘要
For the first time, cobalt tungstate (CoWO4) thin films were synthesized by successive ionic layer adsorption and reaction (SILAR) method. The monoclinic crystal structure of CoWO4 film was confirmed from X-ray diffraction (XRD) technique. The elemental, surface morphological, structural, and electrical analyses were executed using Fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray analysis (EDAX), X-ray photoelectron spectroscopy (XPS), Brunauer-Emmett-Teller (BET), two point probe method, and contact angle measurement techniques. The surface morphology of CoWO4 thin film consisted of islands of agglomerated cauliflower-like spherical nanoparticles with hydrophilic nature. The specific surface area of 60 m2 g−1 with an average pore size of 1.10 nm. The CoWO4 thin film electrode exhibited specific capacitance of 1436.5 F g−1 at a scan rate of 2 mV s−1 in 1 M KOH as well as capacitance retention of 94% over 3000 galvanostatic charge discharge (GCD) cycles. Furthermore, flexible solid-state symmetric supercapacitor (FSS-SSC) device assembled using CoWO4 thin films, showed specific capacitance of 101.32 F g−1, specific energy of 14.07 Wh kg−1 and specific power of 1225.25 W kg−1. This work highlights simplistic preparation of CoWO4 thin films for energy storage application.
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