放大器
阻抗匹配
多波段设备
功率增加效率
晶体管
电气工程
功率(物理)
输电线路
射频功率放大器
电子工程
电阻抗
计算机科学
线性放大器
工程类
物理
电压
CMOS芯片
量子力学
天线(收音机)
作者
Haocheng Cai,Luhong Mao,Jason Cong,Yifei Zhang
标识
DOI:10.1109/icait.2017.8388892
摘要
Structure in the design of a dual band Class-J power amplifiers (PA) for obtaining high efficiency is presented in this work. A large-signal transistor model is used to estimate the device's output parasitic elements and based on this, A dedicated matching network used two section transmission line are employed to synthesize Class-J impedance in both two bands. The simulated results of the designed amplifier show an average 65% power added efficiency (PAE) across 0.6–1.0 GHz and an average 60% PAE across 2.6–3.0 GHz whilst delivering an average output power of more than 39.5 dBm. Realization of the design shows the proposed structure's potential to implement the dual band Class-J PA.
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