Low voltage bulk-driven CMOS inverter with lower delays

In this paper, a low voltage bulk-driven CMOS inverter capable of operating at power supplies of ±0.9V using standard CMOS technologies is proposed. The proposed inverter gives not only smoother transient response with a lower delay, but also a sharper fall from high to low than its gate-driven counterpart. The proposed bulk-driven inverter is analysed for various regions of operation and simulated results using SPICE in 0.35μm CMOS technology are shown to demonstrate the effectiveness of the circuit.