限制器
短路
电气工程
泄漏(经济)
功率(物理)
电子工程
汽车工业
电路切换
材料科学
计算机科学
工程类
电压
物理
航空航天工程
经济
宏观经济学
量子力学
作者
Davide Bisi,J. Gritters,Tsutomu Hosoda,Masamichi Kamiyama,Bill Cruse,Yulu Huang,J. McKay,Geetak Gupta,Rakesh Lal,Carl J. Neufeld,Philip Zuk,Yifeng Wu,P. Parikh,Umesh K. Mishra
标识
DOI:10.1109/apec42165.2021.9486987
摘要
Short-circuit capability is essential for the adoption of GaN power devices in motor drives for industrial and automotive applications. In this work, we report an innovative solution for GaN power switches to achieve short-circuit withstanding time (SCWT) equal to or greater than 3 micro-seconds with limited increase in on-resistance. We discuss the technology, referred to as Short-Circuit Current Limiter (SCCL) and show the experimental results including static and dynamic Ron, 400-V short-circuit, inductive switching, off-state leakage and 1000-hour high-temperature reverse-bias stress. Thanks to extended SCWT, the SCCL technology allows the industry to adopt conventional short-circuit protection schemes, with sufficient immunity to noise and switching transients.
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