共发射极
钝化
兴奋剂
p-n结
材料科学
光电子学
硼
太阳能电池
反向偏压
击穿电压
离子注入
退火(玻璃)
分析化学(期刊)
耗尽区
离子
电压
化学
半导体
纳米技术
图层(电子)
电气工程
复合材料
有机化学
工程类
二极管
色谱法
作者
Ralph Müller,Christian Reichel,Julian Schrof,Milan Padilla,Marisa Selinger,Ino Geisemeyer,Jan Benick,Martin Hermle
标识
DOI:10.1016/j.solmat.2015.05.046
摘要
Interdigitated back-contact (IBC) solar cells were fabricated with a process sequence combining local ion implantation of phosphorus and full area BBr3 furnace diffusion resulting in conversion efficiencies of up to 22.4%. The highly doped emitter and BSF are in direct contact to each other (p+n+ junction) leading to a controlled junction breakdown at low reverse-bias voltages of around 5 V. The breakdown was located at the p+n+ junction and found to be homogeneously distributed over the whole cell area. This is not critical for module integration as the absolute temperature rise of a reverse-biased cell was determined to be less than 35 K. After reverse breakdown, the conversion efficiency degraded by 1–2% absolute due to additional recombination at the p+n+ junction. The cell performance could be fully recovered by a short annealing at 300 °C indicating that the Al2O3 passivation was altered by the reverse breakdown. This might be a fundamental issue for Al2O3 passivated IBC solar cells without gap between emitter and BSF, independent from the doping method.
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