VGF growth of high quality InAs single crystals with low dislocation density

In this work, we report the results of InAs single crystals grown by vertical temperature gradient freezing method (VGF) which has low temperature gradient during the growth process. InAs single crystals with (1 0 0) and (1 1 1) orientation, diameter up to 4 in. have been grown by VGF. Twin-free single crystal ingots with length around 150–200 mm have been obtained reproducibly. Etch pit dislocation density (EPD) of the VGF-InAs single crystals is 1000–3000 cm−2. As-expected, X-ray rocking curve of the VGF-InAs single crystal exhibits a narrower FWHM than LEC-InAs single crystal, indicating a better lattice perfection. In contrast, undoped n type VGF-InAs single crystal has a better electrical property, such as higher electron mobility, lower free electron concentration.