单层
材料科学
异质结
外延
纳米技术
过饱和度
制作
化学气相沉积
合金
过渡金属
晶体生长
光电子学
催化作用
冶金
结晶学
图层(电子)
有机化学
化学
病理
替代医学
医学
作者
Juwon Lee,Sangyeon Pak,Young-Woo Lee,Young S. Park,A‐Rang Jang,John Hong,Yuljae Cho,Bo Hou,Sanghyo Lee,Hu Young Jeong,Hyeon Suk Shin,Stephen M. Morris,SeungNam Cha,Jung Inn Sohn,Jong Min Kim
出处
期刊:ACS Nano
[American Chemical Society]
日期:2019-10-16
卷期号:13 (11): 13047-13055
被引量:51
标识
DOI:10.1021/acsnano.9b05722
摘要
Two-dimensional (2D) heterostructured or alloyed monolayers composed of transition metal dichalcogenides (TMDCs) have recently emerged as promising materials with great potential for atomically thin electronic applications. However, fabrication of such artificial TMDC heterostructures with a sharp interface and a large crystal size still remains a challenge because of the difficulty in controlling various growth parameters simultaneously during the growth process. Here, a facile synthetic protocol designed for the production of the lateral TMDC heterostructured and alloyed monolayers is presented. A chemical vapor deposition approach combined with solution-processed precursor deposition makes it possible to accurately control the sequential introduction time and the supersaturation levels of the vaporized precursors and thus reliably and exclusively produces selective and heterogeneous epitaxial growth of TMDC monolayer crystals. In addition, TMDC core/shell heterostructured (MoS2/alloy, alloy/WS2) or alloyed (Mo1-xWxS2) monolayers are also easily obtained with precisely controlled growth parameters, such as sulfur introduction timing and growth temperature. These results represent a significant step toward the development of various 2D materials with interesting properties.
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