Epitaxial growth of Ce-doped (Pb,Gd)3(Al,Ga)5O12 films and their optical and scintillation properties

Се-doped (Pb,Gd)3(Al,Ga)5O12 single crystalline garnet films were grown using liquid-phase epitaxy from four series of supercooled PbO–B2O3-based melt solutions on Gd3Ga5O12 and Gd3Al2.26Ga2.74O12 single crystal substrates. The optical and scintillation properties of the epitaxial garnet films were studied. The 5d-4f emission of Ce3+ ions within 450–650 nm was observed. The highest pulsed cathodoluminescence yield and scintillation yield values under 133Ba excitation for the Pb0.01Ce0.02Gd2.97Al3.13Ga1.87O12 film were 43,100 photons/MeV and 20,000 photons/MeV, respectively. The pulsed cathodoluminescence decay times of the film were 1.8 (1%), 24 (25%), and 60 ns (74%), and the scintillation decay times were 3.9 (7%) and 43.6 ns (93%). Because of the rapid decay and high light yield, Се-doped (Pb,Gd)3(Al,Ga)5O12 garnet films can be used in X-ray scintillators for different applications, such as homeland security.