Regulation of surface kinetics: rapid growth of n-AlGaN with high conductivity for deep-ultraviolet light emitters

Surface kinetics in Al-rich AlGaN growth are regulated to realize a growth window allowing a higher rate as well as a lower temperature. Hence a rate of 2.3 μm h −1 at 1050 °C is achieved for n-Al 0.55 Ga 0.45 N with the typical step-terrace morphology.